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0

Quantity Price
3000 4.203
6000 4.077
12000 3.954

1 10 100 1000 2500 Updated
* SISF02DN-T1-GE3 0 CNY
* SISF06DN-T1-GE3 0 USD
* SISF02DN-T1-GE3 0 USD
* SISF04DN-T1-GE3 0 USD
* SISF04DN-T1-GE3 8533 USD 1.40 1.20 0.98 0.639
* SISF06DN-T1-GE3 50 CNY 0
* SISF04DN-T1-GE3 0 CNY
* SISF06DN-T1-GE3 1865
* SISF04DN-T1-GE3 2394
* SISF00DN-T1-GE3 17854 1.42000 1.16000 0.90210 0.62285
* SISF02DN-T1-GE3 26 1.50000 1.22600 0.95340 0.65829
* SISF02DN-T1-GE3 8790 USD
* SISF00DN-T1-GE3 4711 USD
* SISF04DN-T1-GE3 7410 USD
* SISF06DN-T1-GE3 0 USD
* SISF04DN-T1-GE3 1146 USD 1.290000 1.216981 1.148095 1.021801
* SISF06DN-T1-GE3 29917 USD 0.830997 0.783960 0.739585 0.658228
* SISF00DN-T1-GE3 0
* SISF02DN-T1-GE3 0
* SISF06DN-T1-GE3 0

Vishay common drain dual n 沟道 30 v ( S1 - S2 ) mosfet 是一款集成式共漏 n 沟道 mosfet 、采用紧凑型热增强型封装。

极低的源到源接通电阻
trench场 效应第四代功率 mosfet

Vishay
Vishay NMOS, MOSFET, SiSF06DN系列, Vds=30 V, powerpak 1212-1e 8SCD封装, 101 A, 8引脚