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(Standard Leadtime :85 Weeks) 17854

Quantity Price
1 1.42000
10 1.16000
100 0.90210
500 0.76460
1000 0.62285

1 10 100 1000 2500 Updated
* SISF06DN-T1-GE3 0 CNY
* SISF02DN-T1-GE3 0 CNY
* SISF06DN-T1-GE3 0 USD
* SISF02DN-T1-GE3 0 USD
* SISF04DN-T1-GE3 0 USD
* SISF04DN-T1-GE3 8533 USD 1.40 1.20 0.98 0.639
* SISF06DN-T1-GE3 50 CNY 0
* SISF04DN-T1-GE3 0 CNY
* SISF06DN-T1-GE3 1865
* SISF04DN-T1-GE3 2394
* SISF02DN-T1-GE3 26 1.50000 1.22600 0.95340 0.65829
* SISF02DN-T1-GE3 8790 USD
* SISF00DN-T1-GE3 4711 USD
* SISF04DN-T1-GE3 7410 USD
* SISF06DN-T1-GE3 0 USD
* SISF04DN-T1-GE3 1146 USD 1.290000 1.216981 1.148095 1.021801
* SISF06DN-T1-GE3 29917 USD 0.830997 0.783960 0.739585 0.658228
* SISF00DN-T1-GE3 0
* SISF02DN-T1-GE3 0
* SISF06DN-T1-GE3 0

TYPEDESCRIPTION
MfrVishay Siliconix
SeriesTrenchFET® Gen IV
PackageTape & Reel (TR)
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual) Common Drain
FET Feature-
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2700pF @ 15V
Power - Max69.4W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8SCD Dual
Supplier Device PackagePowerPAK® 1212-8SCD Dual
Base Product NumberSISF00


Vishay Siliconix
MOSFET DUAL N-CH 30V POWERPAK 12
Mosfet Array 30V 60A (Tc) 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD Dual