Quantity | Price |
|
---|---|---|
1 | 1.50000 | |
10 | 1.22600 | |
100 | 0.95340 | |
500 | 0.80812 | |
1000 | 0.65829 |
Quantity | Price | Price Tax |
---|---|---|
1 | 1.50000 | |
10 | 1.22600 | |
100 | 0.95340 | |
500 | 0.80812 | |
1000 | 0.65829 |
1 | 10 | 100 | 1000 | 2500 | Updated | ||||
---|---|---|---|---|---|---|---|---|---|
* | SISF06DN-T1-GE3 | 0 | CNY | ||||||
* | SISF02DN-T1-GE3 | 0 | CNY | ||||||
* | SISF06DN-T1-GE3 | 0 | USD | ||||||
* | SISF02DN-T1-GE3 | 0 | USD | ||||||
* | SISF04DN-T1-GE3 | 0 | USD | ||||||
* | SISF04DN-T1-GE3 | 8533 | USD | 1.40 | 1.20 | 0.98 | 0.639 | ||
* | SISF06DN-T1-GE3 | 50 | CNY | 0 | |||||
* | SISF04DN-T1-GE3 | 0 | CNY | ||||||
* | SISF06DN-T1-GE3 | 1865 | |||||||
* | SISF04DN-T1-GE3 | 2394 | |||||||
* | SISF00DN-T1-GE3 | 17854 | 1.42000 | 1.16000 | 0.90210 | 0.62285 | |||
* | SISF02DN-T1-GE3 | 8790 | USD | ||||||
* | SISF00DN-T1-GE3 | 4711 | USD | ||||||
* | SISF04DN-T1-GE3 | 7410 | USD | ||||||
* | SISF06DN-T1-GE3 | 0 | USD | ||||||
* | SISF04DN-T1-GE3 | 1146 | USD | 1.290000 | 1.216981 | 1.148095 | 1.021801 | ||
* | SISF06DN-T1-GE3 | 29917 | USD | 0.830997 | 0.783960 | 0.739585 | 0.658228 | ||
* | SISF00DN-T1-GE3 | 0 | |||||||
* | SISF02DN-T1-GE3 | 0 | |||||||
* | SISF06DN-T1-GE3 | 0 |
TYPE | DESCRIPTION |
Mfr | Vishay Siliconix |
Series | TrenchFET® Gen IV |
Package | Tape & Reel (TR) |
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) Common Drain |
FET Feature | - |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 30.5A (Ta), 60A (Tc) |
Rds On (Max) @ Id, Vgs | 3.5mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2650pF @ 10V |
Power - Max | 5.2W (Ta), 69.4W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK® 1212-8SCD |
Supplier Device Package | PowerPAK® 1212-8SCD |
Base Product Number | SISF02 |