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(Standard Leadtime :18 Weeks) 26

Quantity Price
1 1.50000
10 1.22600
100 0.95340
500 0.80812
1000 0.65829

1 10 100 1000 2500 Updated
* SISF06DN-T1-GE3 0 CNY
* SISF02DN-T1-GE3 0 CNY
* SISF06DN-T1-GE3 0 USD
* SISF02DN-T1-GE3 0 USD
* SISF04DN-T1-GE3 0 USD
* SISF04DN-T1-GE3 8533 USD 1.40 1.20 0.98 0.639
* SISF06DN-T1-GE3 50 CNY 0
* SISF04DN-T1-GE3 0 CNY
* SISF06DN-T1-GE3 1865
* SISF04DN-T1-GE3 2394
* SISF00DN-T1-GE3 17854 1.42000 1.16000 0.90210 0.62285
* SISF02DN-T1-GE3 8790 USD
* SISF00DN-T1-GE3 4711 USD
* SISF04DN-T1-GE3 7410 USD
* SISF06DN-T1-GE3 0 USD
* SISF04DN-T1-GE3 1146 USD 1.290000 1.216981 1.148095 1.021801
* SISF06DN-T1-GE3 29917 USD 0.830997 0.783960 0.739585 0.658228
* SISF00DN-T1-GE3 0
* SISF02DN-T1-GE3 0
* SISF06DN-T1-GE3 0

TYPEDESCRIPTION
MfrVishay Siliconix
SeriesTrenchFET® Gen IV
PackageTape & Reel (TR)
Product StatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual) Common Drain
FET Feature-
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C30.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs3.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2650pF @ 10V
Power - Max5.2W (Ta), 69.4W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CasePowerPAK® 1212-8SCD
Supplier Device PackagePowerPAK® 1212-8SCD
Base Product NumberSISF02


Vishay Siliconix
MOSFET DUAL N-CH 25V 1212-8
Mosfet Array 25V 30.5A (Ta), 60A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD