SI7411DN-T1-GE3 Overview

This device's continuous drain current (ID) is 7.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -20V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 135 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 30A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).

SI7411DN-T1-GE3 Features

a continuous drain current (ID) of 7.5A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 135 ns
based on its rated peak drain current 30A.
a 20V drain to source voltage (Vdss)

SI7411DN-T1-GE3 Applications

There are a lot of Vishay Siliconix
SI7411DN-T1-GE3 applications of single MOSFETs transistors.

• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples