P-Channel Tape & Reel (TR) 19m Ω @ 11.4A, 4.5V ±8V 41nC @ 4.5V PowerPAK® 1212-8
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 7.5A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 135 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 30A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 23 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.By using drive voltage (1.8V 4.5V), this device helps reduce its overall power consumption.
