| 1 | 10 | 100 | 1000 | 2500 | Updated | ||||
|---|---|---|---|---|---|---|---|---|---|
| * | RFD16N06LESM9A | 0 | CNY | 6.489 | |||||
| * | RFD16N05LSM9A | 0 | CNY | 4.349 | |||||
| * | RFD16N05SM | 738072 | USD | ||||||
| * | RFD16N05LSM | 922524 | USD | ||||||
| * | RFD16N05 | 859164 | USD | ||||||
| * | RFD16N05SM9A | 444636 | USD | ||||||
| * | RFD16N06LESM9A | 123348 | USD | ||||||
| * | RFD16N05LSM9A | 307164 | USD | ||||||
| * | RFD16N05L | 0 | USD | ||||||
| * | RFD16N05L | 0 | USD | ||||||
| * | RFD16N05SM9A | 1 | USD | ||||||
| * | RFD16N06LESM9A | 1 | USD | ||||||
| * | RFD16N05SM9A | 135 | |||||||
| * | RFD16N05LSM9A | 0 | |||||||
| * | RFD16N06LESM9A | 0 | |||||||
| * | RFD16N05 | 0 | |||||||
| * | RFD16N05LSM | 0 | |||||||
| * | RFD16N05SM | 0 | |||||||
| * | RFD16N05SM9A | 2500 | CNY | 6.6256 | |||||
| * | RFD16N05LSM9A | 0 | CNY | 3.703 | |||||
| * | RFD16N06LESM9A | 0 | CNY | 6.1117 | |||||
| * | RFD16N05SM9AS2480 | 0 | |||||||
| * | RFD16N05LSM9A | 1348 | USD | 0.7722 | 0.5145 | ||||
| * | RFD16N05SM9A | 121 | USD | 0.91 | |||||
| * | RFD16N05LSM9A-VB | 1 | USD | 0.645360 | 0.608830 | 0.574368 | |||
| * | RFD16N06LE-VB | 179 | USD | 0.622440 | 0.587208 | 0.553969 | |||
| * | RFD16N05SM9AS2480 | 975 | USD | 0.792824 | 0.747947 | 0.705610 | |||
| * | RFD16N05LSM9A | 291 | USD | 2.570288 | 2.424800 | 2.287547 | |||
| * | RFD16N05SM9A | 3669 | USD | ||||||
| * | RFD16N06LESM9A | 1 | USD | 0.561376 | 0.529600 | 0.499623 | |||
| * | RFD16N05LSM9A-VB | 10332 | USD | ||||||
| * | RFD16N05LSM9A | 569 | USD | ||||||
| * | RFD16N05SM9A | 4267 | USD | ||||||
| * | RFD16N06LE-VB | 14374 | USD | ||||||
| * | RFD16N05SM9AS2480 | 2898 | USD | ||||||
| * | RFD16N06LESM9A | 1 | USD | ||||||
| * | RFD16N05LSM9A | 0 | |||||||
| * | RFD16N05SM9A | 0 | |||||||
| * | RFD16N06LESM9A | 0 |
MegaFET 工艺使用接近 LSI 集成电路的特征尺寸，对硅进行了最佳利用，从而获得出色的性能。
在半自动模式下， MOSFET 器件的组合相当庞大，包括高电压 (250V)> 和低电压 (250V)在半 MOSFET 上，可提供卓越的设计可靠性，从降低的电压峰值和过冲，到降低接点电容和反向恢复电荷，以及消除额外的外部组件，从而使系统保持较长的运行时间。
