| 1 | 10 | 100 | 1000 | 2500 | Updated | ||||
|---|---|---|---|---|---|---|---|---|---|
| * | RFD16N05SM9A | 0 | CNY | 2.665 | |||||
| * | RFD16N06LESM9A | 0 | CNY | 6.489 | |||||
| * | RFD16N05LSM9A | 0 | CNY | 4.349 | |||||
| * | RFD16N05SM | 738072 | USD | ||||||
| * | RFD16N05LSM | 922524 | USD | ||||||
| * | RFD16N05 | 859164 | USD | ||||||
| * | RFD16N05SM9A | 444636 | USD | ||||||
| * | RFD16N06LESM9A | 123348 | USD | ||||||
| * | RFD16N05LSM9A | 307164 | USD | ||||||
| * | RFD16N05L | 0 | USD | ||||||
| * | RFD16N05L | 0 | USD | ||||||
| * | RFD16N05SM9A | 1 | USD | ||||||
| * | RFD16N06LESM9A | 1 | USD | ||||||
| * | RFD16N05SM9A | 135 | |||||||
| * | RFD16N05LSM9A | 0 | |||||||
| * | RFD16N06LESM9A | 0 | |||||||
| * | RFD16N05 | 0 | |||||||
| * | RFD16N05LSM | 0 | |||||||
| * | RFD16N05SM | 0 | |||||||
| * | RFD16N05SM9A | 2500 | CNY | 6.6256 | |||||
| * | RFD16N05LSM9A | 0 | CNY | 3.703 | |||||
| * | RFD16N06LESM9A | 0 | CNY | 6.1117 | |||||
| * | RFD16N05SM9AS2480 | 0 | |||||||
| * | RFD16N05LSM9A | 1348 | USD | 0.7722 | 0.5145 | ||||
| * | RFD16N05SM9A | 121 | USD | 0.91 | |||||
| * | RFD16N05LSM9A-VB | 1 | USD | 0.645360 | 0.608830 | 0.574368 | |||
| * | RFD16N06LE-VB | 179 | USD | 0.622440 | 0.587208 | 0.553969 | |||
| * | RFD16N05SM9AS2480 | 975 | USD | 0.792824 | 0.747947 | 0.705610 | |||
| * | RFD16N05LSM9A | 291 | USD | 2.570288 | 2.424800 | 2.287547 | |||
| * | RFD16N05SM9A | 3669 | USD | ||||||
| * | RFD16N06LESM9A | 1 | USD | 0.561376 | 0.529600 | 0.499623 | |||
| * | RFD16N05LSM9A-VB | 10332 | USD | ||||||
| * | RFD16N05SM9A | 4267 | USD | ||||||
| * | RFD16N06LE-VB | 14374 | USD | ||||||
| * | RFD16N05SM9AS2480 | 2898 | USD | ||||||
| * | RFD16N06LESM9A | 1 | USD | ||||||
| * | RFD16N05LSM9A | 0 | |||||||
| * | RFD16N05SM9A | 0 | |||||||
| * | RFD16N06LESM9A | 0 |
The RFD16N05LSM9A is a Mega FET-based N-channel logic level power MOSFET. This method, which employs feature sizes that are similar to those found in LSI integrated circuits, allows for the most efficient use of silicon, resulting in exceptional performance. It's intended for use with logic level (5V) driving sources in programmable controllers, switching regulators, switching converters, and bipolar transistor emitter switches. This is achieved because to a unique gate oxide design that allows for full rated conductance at gate biases of 3 to 5V, allowing for genuine on-off power management straight from logic circuit supply voltages. TA09871 was the previous developmental type.
UIS SOA rating curve (single pulse)
Can be driven directly from CMOS, NMOS, and TTL circuits
SOA is power dissipation limited
Nanosecond switching speeds
Linear transfer characteristics
High input impedance
Majority carrier device
Power Management
Motor Drive & Control
Industrial
