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(Standard Leadtime :) 4319

Quantity Price

1 10 100 1000 2500 Updated
* FQT1N60CTF-WS 0 CNY
* FQT1N60CTF-WS 0 CNY
* FQT1N80TF_WS 2624 USD
* FQT1N60CTF_WS 36000 USD
* FQT1N80TF-WS 1 USD
* FQT1N60CTF-WS 1 USD
* FQT1N80TF_WS 1 USD
* FQT1N60CTF-WS 0
* FQT1N80TF-WS 0
* FQT1N60CTF-WS 20000 CNY
* FQT1N80TF-WS 0 CNY
* FQT1N60CTF 0
* FQT1N80TF-WS 4516 USD 4.456000 4.203774 3.965824
* FQT1N60CTF-WS 129 USD
* FQT1N60CTF-WS 8626 USD
* FQT1N60CTF-WS 0
* FQT1N80TF-WS 0

ON Semiconductor
N-Channel Tape & Reel (TR) 20 Ω @ 100mA, 10V ±30V 195pF @ 25V 7.2nC @ 10V TO-261-3
A device's maximum input capacitance is 195pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.Its drain current is 0.0002A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 15 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 5V.This device uses no drive voltage (10V) to reduce its overall power consumption.