1 | 10 | 100 | 1000 | 2500 | Updated | ||||
---|---|---|---|---|---|---|---|---|---|
* | FQD2N100TM | 0 | CNY | 4.094 | |||||
* | FQD2N80TM | 0 | CNY | 4.294 | |||||
* | FQD2N100TM | 20 | CNY | 3.48396 | 3.33248 | ||||
* | FQD2N60CTF_F080 | 7280 | USD | ||||||
* | FQD2N80TM_WS | 2864 | USD | ||||||
* | FQD2N90TF | 93768 | USD | ||||||
* | FQD2N80TF | 16800 | USD | ||||||
* | FQD2N100TF | 5520 | USD | ||||||
* | FQD2N60TF | 2976 | USD | ||||||
* | FQD2N60TM | 6384 | USD | ||||||
* | FQD2N50TF | 12252 | USD | ||||||
* | FQD2N50TM | 240000 | USD | ||||||
* | FQD2N60CTF | 30552 | USD | ||||||
* | FQD2N30TM | 3344 | USD | ||||||
* | FQD2N40TM | 42000 | USD | ||||||
* | FQD2N40TF | 4144 | USD | ||||||
* | FQD2N80TM | 41136 | USD | ||||||
* | FQD2N60CTM_WS | 4112 | USD | ||||||
* | FQD2N90TM | 120000 | USD | ||||||
* | FQD2N60CTM | 286656 | USD | ||||||
* | FQD2N100TM | 140364 | USD | ||||||
* | FQD2N90TM | 1 | USD | ||||||
* | FQD2N80TM | 7500 | |||||||
* | FQD2N90TM | 4 | |||||||
* | FQD2N60CTM | 0 | |||||||
* | FQD2N60CTM-WS | 0 | |||||||
* | FQD2N100TM | 0 | |||||||
* | FQD2N40TF | 0 | |||||||
* | FQD2N40TM | 0 | |||||||
* | FQD2N30TM | 0 | |||||||
* | FQD2N60CTF | 0 | |||||||
* | FQD2N50TM | 0 | |||||||
* | FQD2N50TF | 0 | |||||||
* | FQD2N60TM | 0 | |||||||
* | FQD2N60TF | 0 | |||||||
* | FQD2N100TF | 0 | |||||||
* | FQD2N80TF | 0 | |||||||
* | FQD2N90TF | 0 | |||||||
* | FQD2N80TM_WS | 0 | |||||||
* | FQD2N60CTF_F080 | 0 | |||||||
* | FQD2N60CTM | 0 | CNY | 5.0139 | |||||
* | FQD2N80TM | 0 | CNY | 4.4767 | |||||
* | FQD2N90TM | 0 | CNY | 5.5154 | |||||
* | FQD2N100TM | 0 | USD | ||||||
* | FQD2N100TM | 166736 | USD | ||||||
* | FQD2N60CTM-WS | 5808 | USD | ||||||
* | FQD2N80TM | 1 | USD | 1.403280 | 1.323849 | 1.248914 | |||
* | FQD2N60CTM | 3590 | USD | 0.792360 | 0.747509 | 0.705198 | |||
* | FQD2N60CTF | 4209 | USD | 0.297529 | 0.280688 | 0.264800 | |||
* | FQD2N50TF | 55 | USD | 8.063371 | 7.606953 | 7.176371 |
The FQD2N100TM is an N-channel QFET? enhancement-mode power MOSFET produced using planar stripe and DMOS technology. The advanced MOSFET FQD2N100TM has been specially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This FQD2N100TM is suitable for switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
1.6A, 1000V, RDS(on) = 9Ω(Max.) @VGS = 10 V, ID = 0.8A
Low gate charge ( Typ. 12nC)
Low Crss ( Typ. 5pF)
100% avalanche tested
RoHS Compliant
Switched mode power supplies
Active power factor correction (PFC)
Electronic lamp ballasts
Lighting