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(Standard Leadtime :) 171

Quantity Price
1 2.244206
10 2.117175
100 1.997335
500 1.884279
1000 1.777622

1 10 100 1000 2500 Updated
* SUM40014M-GE3 0 CNY
* SUM40012EL-GE3 0 CNY
* SUM40N02-12P-E3 6800 USD
* SUM40N10-30-E3 5408 USD
* SUM40010EL-GE3 2608 USD
* SUM40N15-38-E3 127944 USD
* SUM40014M-GE3 50 CNY 0
* SUM40010EL-GE3 0 CNY 0
* SUM40012EL-GE3 176
* SUM40010EL-GE3 0
* SUM40014M-GE3 0
* SUM40N10-30-E3 0
* SUM40N15-38-E3 0
* SUM40N02-12P-E3 0
* SUM40010EL-GE3 0 CNY
* SUM40012EL-GE3 0 CNY
* SUM40012EL-GE3 760 USD 2.431 1.9324
* SUM40010EL-GE3 8012 USD 29.446080 27.779321 26.206906 23.324053
* SUM40010EL-GE3 0
* SUM40012EL-GE3 0
* SUM40014M-GE3 0

Vishay Siliconix
N-Channel Tape & Reel (TR) 38mOhm @ 15A, 10V ±20V 2500pF @ 25V 60nC @ 10V 150V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 30 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 38mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 150V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (6V 10V).