| 1 | 10 | 100 | 1000 | 2500 | Updated | ||||
|---|---|---|---|---|---|---|---|---|---|
| * | SIZ340DT-T1-GE3 | 4576 | USD | ||||||
| * | SIZ342DT-T1-GE3 | 8592 | USD | ||||||
| * | SIZ340BDT-T1-GE3 | 0 | USD | ||||||
| * | SIZ340ADT-T1-GE3 | 0 | USD | ||||||
| * | SIZ340BDT-T1-GE3 | 15 | CNY | 0 | |||||
| * | SIZ340ADT-T1-GE3 | 30 | CNY | 6.3663 | 5.5274 | ||||
| * | SIZ348DT-T1-GE3 | 5825 | USD | 1.09 | 0.962 | 0.76 | 0.534 | ||
| * | SIZ340DT-T1-GE3 | 0 | CNY | ||||||
| * | SIZ342DT-T1-GE3 | 0 | CNY | ||||||
| * | SIZ340DT-T1-GE3 | 1314 | |||||||
| * | SIZ348DT-T1-GE3 | 2875 | |||||||
| * | SIZ342DT-T1-GE3 | 20020 | 0.89000 | 0.72500 | 0.56420 | 0.38956 | |||
| * | SIZ340BDT-T1-GE3 | 684 | 0.71000 | 0.61900 | 0.42840 | 0.30462 | |||
| * | SIZ340ADT-T1-GE3 | 18 | |||||||
| * | SIZ348DT-T1-GE3 | 3000 | USD | 0.7157 | 0.4728 | ||||
| * | SIZ340DT-T1-GE3 | 2400 | USD | 0.639508 | 0.603310 | 0.569160 | |||
| * | SIZ342DT-T1-GE3 | 10076 | USD | ||||||
| * | SIZ346DT-T1-GE3 | 6712 | USD | ||||||
| * | SIZ348DT-T1-GE3 | 15574 | USD | ||||||
| * | SIZ342ADT-T1-GE3 | 9518 | USD | ||||||
| * | SIZ340BDT-T1-GE3 | 0 | USD | ||||||
| * | SIZ340BDT-T1-GE3 | 0 | USD | ||||||
| * | SIZ340ADT-T1-GE3 | 0 | USD | ||||||
| * | SIZ342DT-T1-GE3 | 19903 | USD | 0.898648 | 0.847782 | 0.799794 | 0.711813 | ||
| * | SIZ340BDT-T1-GE3 | 26278 | USD | 0.716899 | 0.676320 | 0.638037 | 0.567852 | ||
| * | SIZ340ADT-T1-GE3 | 16485 | USD | ||||||
| * | SIZ340DT-T1-GE3 | 11265 | USD | ||||||
| * | SIZ346DT-T1-GE3 | 3649 | USD | 0.601000 | 0.566981 | 0.534888 | |||
| * | SIZ340ADT-T1-GE3 | 0 | |||||||
| * | SIZ340BDT-T1-GE3 | 0 | |||||||
| * | SIZ340DT-T1-GE3 | 0 | |||||||
| * | SIZ342ADT-T1-GE3 | 0 | |||||||
| * | SIZ348DT-T1-GE3 | 0 | |||||||
| * | SIZ342DT-T1-GE3 | 0 | |||||||
| * | SIZ346DT-T1-GE3 | 0 |
Vishay SIZ340ADT and SIZ342ADT Dual N-Channel 30V MOSFETs are TrenchFET® Gen IV power MOSFETs, co-packaged to reduce space and increase performance over two discretes. These co-packaged PowerPAIR® 3x3 MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced increasing efficiency.
