| Quantity | Price |
|
|---|---|---|
| 3000 | 5.366 | |
| 6000 | 5.205 | |
| 12000 | 5.049 |
| Quantity | Price | Price Tax |
|---|---|---|
| 3000 | 5.366 | |
| 6000 | 5.205 | |
| 12000 | 5.049 |
| 1 | 10 | 100 | 1000 | 2500 | Updated | ||||
|---|---|---|---|---|---|---|---|---|---|
| * | SISS63DN-T1-GE3 | 0 | USD | ||||||
| * | SISS66DN-T1-GE3 | 0 | USD | ||||||
| * | SISS60DN-T1-GE3 | 5984 | USD | 1.44 | 1.29 | 1.01 | 0.807 | ||
| * | SISS63DN-T1-GE3 | 556818000 | USD | 1.05 | 0.941 | 0.734 | 0.489 | ||
| * | SISS65DN-T1-GE3 | 10740 | USD | 0.94 | 0.834 | 0.639 | 0.404 | ||
| * | SISS61DN-GE3 | 4300 | CNY | 3.0983 | 3.0485 | 2.9035 | |||
| * | SISS61DN-GE3 | 4300 | CNY | 3.0983 | 3.0485 | 2.9035 | |||
| * | SISS60DN-T1-GE3 | 335 | |||||||
| * | SISS65DN-T1-GE3 | 0 | |||||||
| * | SISS61DN-T1-GE3 | 0 | |||||||
| * | SISS63DN-T1-GE3 | 0 | |||||||
| * | SISS67DN-T1-GE3 | 0 | |||||||
| * | SISS64DN-T1-GE3 | 0 | |||||||
| * | SISS66DN-T1-GE3 | 0 | |||||||
| * | SISS65DN-T1-GE3 | 0 | CNY | ||||||
| * | SISS60DN-T1-GE3 | 0 | |||||||
| * | SISS64DN-T1-GE3 | 0 | |||||||
| * | SISS66DN-T1-GE3 | 0 | |||||||
| * | SISS65DN-T1-GE3 | 0 | |||||||
| * | SISS67DN-T1-GE3 | 0 | |||||||
| * | SISS61DN-T1-GE3 | 0 | |||||||
| * | SISS63DN-T1-GE3 | 0 |
具有肖特基二极管的 N 通道 30V (D-S) MOSFET 。
TrenchFET® 第四代功率 MOSFET
具有单片肖特基二极管的 SkyFET ®
优化的 RDS x QG 和 RDS x QGD FOM 可提高高频切换的效率
