| Quantity | Price |
|
|---|---|---|
| 1 | 0.64000 | |
| 10 | 0.54800 | |
| 100 | 0.38080 | |
| 500 | 0.29730 | |
| 1000 | 0.24164 |
| Quantity | Price | Price Tax |
|---|---|---|
| 1 | 0.64000 | |
| 10 | 0.54800 | |
| 100 | 0.38080 | |
| 500 | 0.29730 | |
| 1000 | 0.24164 |
| 1 | 10 | 100 | 1000 | 2500 | Updated | ||||
|---|---|---|---|---|---|---|---|---|---|
| * | SIA931DJ-T1-GE3 | 0 | CNY | ||||||
| * | SIA938DJT-T1-GE3 | 0 | CNY | 4.056 | 3.66 | ||||
| * | SIA936EDJ-T1-GE3 | 7024 | USD | ||||||
| * | SIA931DJ-T1-GE3 | 144000 | USD | ||||||
| * | SIA931DJ-T1-GE3 | 0 | USD | ||||||
| * | SIA938DJT-T1-GE3 | 0 | USD | ||||||
| * | SIA931DJ-T1-GE3 | 0 | CNY | ||||||
| * | SIA931DJ-T1-GE3 | 0 | |||||||
| * | SIA936EDJ-T1-GE3 | 0 | |||||||
| * | SIA931DJ-T1-GE3 | 3288 | USD | ||||||
| * | SIA936EDJ-T1-GE3 | 2068 | USD | ||||||
| * | SIA938DJT-T1-GE3 | 0 | USD | ||||||
| * | SIA938DJT-T1-GE3 | 0 | USD | ||||||
| * | SIA938DJT-T1-GE3 | 3144 | USD | 0.640000 | 0.603774 | 0.569598 | 0.506940 | ||
| * | SIA931DJ-T1-GE3 | 13205 | USD | ||||||
| * | SIA936EDJ-T1-GE3 | 6678 | USD | ||||||
| * | SIA931DJ-T1-GE3 | 0 | |||||||
| * | SIA938DJT-T1-GE3 | 0 |
| TYPE | DESCRIPTION |
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta), 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 21.5mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 425pF @ 10V |
| Power - Max | 1.9W (Ta), 7.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SC-70-6 Dual |
| Supplier Device Package | PowerPAK® SC-70-6 Dual |
| Base Product Number | SIA938 |
