P-Channel Tape & Reel (TR) 64m Ω @ 5A, 10V ±20V 40nC @ 10V 60V PowerPAK® SO-8

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 24.2 mJ (Eas).The drain current is the maximum continuous current the device can conduct, and this device has -5A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -60V, and this device has a drainage-to-source breakdown voltage of -60VV.Drain current refers to the maximum continuous current a device can conduct, and it is 3.2A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 65 ns.Peak drain current is 25A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is -3V, which means that it will not activate any of its functions when its threshold voltage reaches -3V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.