P-Channel Tape & Reel (TR) 64m Ω @ 5A, 10V ±20V 40nC @ 10V 60V PowerPAK® SO-8

As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 24.2 mJ.Its continuous drain current is -5A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-60V, and this device has a drain-to-source breakdown voltage of -60V voltage.Its drain current is 3.2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 65 ns.Its maximum pulsed drain current is 25A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -3V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.