P-Channel Tape & Reel (TR) 10m Ω @ 15A, 10V ±20V 4150pF @ 20V 144nC @ 10V 40V PowerPAK® SO-8

When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 45 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4150pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -16.6A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-40V. And this device has -40V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 46A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 56 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 70A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -2.3V threshold voltage. Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.