SI7461DP-T1-GE3 Overview

The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -14.4A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 205 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 20 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -3V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

SI7461DP-T1-GE3 Features

a continuous drain current (ID) of -14.4A
the turn-off delay time is 205 ns
based on its rated peak drain current 60A.
a threshold voltage of -3V
a 60V drain to source voltage (Vdss)

SI7461DP-T1-GE3 Applications

There are a lot of Vishay Siliconix
SI7461DP-T1-GE3 applications of single MOSFETs transistors.

• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools