SI7459DP-T1-GE3 Overview

The drain current is the maximum continuous current the device can conduct, and this device has 13A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 180 ns.Peak drain current is 60A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 25 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

SI7459DP-T1-GE3 Features

a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 180 ns
based on its rated peak drain current 60A.

SI7459DP-T1-GE3 Applications

There are a lot of Vishay Siliconix
SI7459DP-T1-GE3 applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies