P-Channel Tape & Reel (TR) 42m Ω @ 7.9A, 10V ±20V 5230pF @ 50V 160nC @ 10V 100V PowerPAK® SO-8

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 80 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5230pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7.9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -100V, and this device has a drainage-to-source breakdown voltage of -100VV.Drain current refers to the maximum continuous current a device can conduct, and it is 28A.Peak drain current is 35A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 100V is required between drain and source (Vdss).Using drive voltage (6V 10V), this device contributes to a reduction in overall power consumption.