100 V
This device conducts a continuous drain current (ID) of 5.7 A, which is the maximum continuous current transistor can conduct.Using VGS=100 V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100 V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 46 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 28 mΩ, which means the device is not biased.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20 V.This transistor requires a drain-source voltage (Vdss) of 100 V.