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1 10 100 1000 2500 Updated
* SI7431DP-T1-E3 3952 USD
* SI7430DP-T1-GE3 25968 USD
* SI7430DP-T1-E3 85296 USD
* SI7434DP-T1-GE3 2736 USD
* SI7434DP-T1-E3 5056 USD
* SI7431DP-T1-GE3 30768 USD
* SI7439DP-T1-E3 31812 USD
* SI7439DP-T1-GE3 412140 USD
* SI7434ADP-T1-RE3 0 USD
* SI7431DP-T1-GE3 1 USD
* SI7430DP-T1-E3 1 USD
* SI7431DP-T1-E3 1 USD
* SI7430DP-T1-GE3 1 USD
* SI7430DP-T1-GE3 1 USD
* SI7434ADP-T1-RE3 1637
* SI7430DP-T1-E3 0
* SI7434DP-T1-GE3 0
* SI7439DP-T1-E3 0
* SI7439DP-T1-GE3 0
* SI7431DP-T1-GE3 0
* SI7430DP-T1-GE3 0
* SI7431DP-T1-E3 0
* SI7434DP-T1-E3 0
* SI7430DP-T1-E3 3000 CNY
* SI7430DP-T1-GE3 0 CNY
* SI7431DP-T1-E3 0 CNY
* SI7431DP-T1-GE3 0 CNY
* SI7434DP-T1-E3 0 CNY
* SI7434DP-T1-GE3 0 CNY
* SI7439DP-T1-E3 0 CNY
* SI7439DP-T1-GE3 0 CNY
* SI7430DP-T1-GE3 1556 USD 3.357664 3.167608 2.988309
* SI7430DP-T1-E3 5749 USD 3.855008 3.636800 3.430943
* SI7431DP-T1-E3 4890 USD 30.218978 28.508470 26.894783
* SI7434DP-T1-E3 11166 USD 3.011248 2.840800 2.680000
* SI7439DP-T1-GE3 1849 USD 7.059200 6.659623 6.282663
* SI7439DP-T1-E3 5982 USD 6.715328 6.335215 5.976618
* SI7434DP-T1-GE3 7176 USD 2.091168 1.972800 1.861132
* SI7431DP-T1-GE3 5890 USD
* SI7434DP-T1-GE3 6787 USD 1.121056 1.057600 0.997736
* SI7434DP-T1-E3 11971 USD 1.480269 1.396480 1.317434
* SI7439DP-T1-GE3 14380 USD
* SI7439DP-T1-E3 13720 USD
* SI7431DP-T1-GE3 0
* SI7439DP-T1-E3 0

Vishay Siliconix
P-Channel Tape & Reel (TR) 174m Ω @ 3.8A, 10V ±20V 135nC @ 10V 200V PowerPAK® SO-8
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 45 mJ.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -3.8A.With a drain-source breakdown voltage of -200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -200V.2.2A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 110 ns.Peak drain current for this device is 30A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 23 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 200V.Using drive voltage (6V 10V) reduces this device's overall power consumption.