• API
  • 中文

(Standard Leadtime :) 25686

Quantity Price
1 5.683360
10 5.361660
100 5.058170
500 4.771859
1000 4.501753

1 10 100 1000 2500 Updated
* MMST4403-7-F 23 CNY 0.83948 0.80298
* MMST4403T146 0 CNY 0.04797 0.03837 0.03454
* MMST4401-7 684000 USD
* MMST4124-7 432000 USD
* MMST4126-7 4448 USD
* MMST4124T146 2992 USD
* MMST4401-7-F 929364 USD
* MMST4126-7-F 604344 USD
* MMST4403T146 495420 USD
* MMST4124-7-F 547200 USD
* MMST4403-7 3248 USD
* MMST4401-TP 116820 USD
* MMST4401T146 120000 USD
* MMST4403-TP 43008 USD
* MMST4403-7-F 36000 USD
* MMST4401-7-F 1 USD
* MMST4403-7-F 7900
* MMST4124-7-F 2054
* MMST4403T146 1891
* MMST4401-TP 182
* MMST4401-7-F 0
* MMST4403-TP 22
* MMST4401T146 11
* MMST4401-7 0
* MMST4124T146 0
* MMST4126-7-F 3258
* MMST4126-7 34
* MMST4403-7 2123
* MMST4124-7 21
* MMST4124T146 0 CNY
* MMST4401-TP 0 CNY
* MMST4401T146 0 CNY
* MMST4403-TP 0 CNY
* MMST4403T146 0 CNY
* MMST4401-7-F 0 CNY
* MMST4401-7-F-73 0 CNY
* MMST4403 12000 USD
* MMST4401 192000 USD
* MMST4403T146 6000 USD 0.0413
* MMST4401-7-F 2799 USD 0.0416
* MMST4401-7-F 2329 USD 0.081240 0.049779
* MMST4124-7-F 28186 USD 14.683200 13.852075 13.067996
* MMST4403-7-F 131343 USD 0.057446 0.035200
* MMST4126-7-F 56903 USD 5.975200 5.636981 5.317907
* MMST4401T146 16248 USD 1.912834 1.804560 1.702415
* MMST4401-TP 900 USD 0.249000 0.234906 0.221609
* MMST4126-7 34 USD 0.200000 0.188679 0.177999
* MMST4124-7 80005 USD 0.150023 0.141531 0.133520
* MMST4403T146 33130 USD 0.572051 0.539671 0.509124
* MMST4403-7 2902 USD 0.034076 0.020880

Micro Commercial Co
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP SC-70, SOT-323 Tape & Reel (TR) Surface Mount
In this device, the DC current gain is 100 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 15mA, 150mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.There is a 40V maximal voltage in the device due to collector-emitter breakdown.