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Cypress Semiconductor
FM18W08-SGTR 877-FM18W08-SGTR
F-RAM 256Kb 70ns 32K x 8 Parallel FRAM
Time: 2022-03-05T00:31:13Z

(Standard Leadtime :<!-- The first line will be the total with expand link (if we have pending shipments) or the first shipment--> <div id="onOrderLine0" class="onOrderLine"> <div class="col-xs-3 onOrderQuantity">2,000</div> <div class="col-xs-9 onOrderDate">Expected 7/18/2022</div> </div> <!-- The second line will be the remaining total with expand link (if no pending and more than 2 shipments or the second shipment (if no pending)--> <!-- These are the hidden lines -->) 737

Quantity Price
1 12.83 12.83
10 11.88 118.80
25 11.61 290.25
50 11.55 577.50
100 10.17 1017.00
250 9.78 2445.00
1000 9.77 9770.00

1 10 100 1000 2500 Updated
* FM18W08-SGTR 1072524 USD
* FM18W08-SG 0 CNY 153.65
* FM18W08-SG 92160 USD
* FM18W08-PG 0 USD
* FM18W08-PG 0 USD
* FM18W08-SG 1 USD
* FM18W08-SGTR 1 USD
* FM18W08-SG 162160 USD 12.83 11.88 10.17
* FM18W08-SGTR 204 USD 12.83000 11.88000 10.16640
* FM18W08-SG 0 USD 12.83000 11.88000 10.16640
* FM18W08-PG 0 USD 14.78000
* FM18W08-SGTR 0 CNY 76.964
* FM18W08-SGTR 28771 USD
* FM18W08-SG 35533 USD
* FM18W08-SG 0

Cypress Semiconductor
F-RAM 256Kb 70ns 32K x 8 Parallel FRAM

Cypress Semiconductor Parallel F-RAM Non-Volatile Memory operates similar to that of other RAM devices and can be used as a drop-in replacement for a standard SRAM in a system. These F-RAMs read and write similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. These features make these devices ideal for non-volatile memory applications requiring frequent or rapid writes.