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(Standard Leadtime :) 10185

Quantity Price

1 10 100 1000 2500 Updated
* BD437 0 CNY
* BD437G 0 CNY 3.718
* BD437T 7008 USD
* BD437 789456 USD
* BD437TG 3600 USD
* BD437G 16980 USD
* BD437S 21408 USD
* BD437 1 USD
* BD437G 1 USD
* BD437TG 1 USD
* BD437 3717
* BD437G 0
* BD437TG 0
* BD437S 0
* BD437T 0
* BD437-BP 0
* BD437G 0 CNY 2.9009
* BD437-BP 0
* BD437G 560 USD
* BD437 16490 USD
* BD437S 0 USD
* BD437TG 0 USD
* BD437S 18256 USD 8.688000 8.196226 7.732289
* BD437G 59259 USD
* BD437 35 USD 0.691295 0.652165 0.615250
* BD437TG 3831 USD
* BD437S 152 USD
* BD437G 60305 USD
* BD437-CDI 0
* BD437-ST 0
* BD437G 0
* BD437 0

ON Semiconductor
NPN -55°C~150°C TJ 100μA ICBO TO-225AA, TO-126-3 Bulk Through Hole
In this device, the DC current gain is 85 @ 500mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 800mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 300mA, 3A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (4A).An input voltage of 45V volts is the breakdown voltage.Supplier device package TO-225AA comes with the product.The device exhibits a collector-emitter breakdown at 45V.Maximum collector currents can be below 4A volts.