| 1 | 10 | 100 | 1000 | 2500 | Updated | ||||
|---|---|---|---|---|---|---|---|---|---|
| * | CGH402T350X3L | 0 | USD | 200.5084 | |||||
| * | CGH40010P | 3936 | USD | ||||||
| * | CGH40045F | 14916 | USD | ||||||
| * | CGH40035F | 14352 | USD | ||||||
| * | CGH40025F | 21060 | USD | ||||||
| * | CGH40180PP | 6204 | USD | ||||||
| * | CGH40090PP | 6276 | USD | ||||||
| * | CGH40120F | 13956 | USD | ||||||
| * | CGH40006S | 14580 | USD | ||||||
| * | CGH40010F | 15240 | USD | ||||||
| * | CGH40006P | 9324 | USD | ||||||
| * | CGH40035F-TB | 6912 | USD | ||||||
| * | CGH40180PP-TB | 8514 | USD | ||||||
| * | CGH40006S-KIT | 8496 | USD | ||||||
| * | CGH40120F-TB | 6012 | USD | ||||||
| * | CGH40090PP-TB | 6840 | USD | ||||||
| * | CGH40045F-TB | 8136 | USD | ||||||
| * | CGH40006P-TB | 5148 | USD | ||||||
| * | CGH40025F-TB | 5814 | USD | ||||||
| * | CGH402T350X3L | 2430 | USD | ||||||
| * | CGH402T350X3L | 0 | |||||||
| * | CGH40045F | 325 | USD | 164.15 | |||||
| * | CGH40006S | 1 | USD | ||||||
| * | CGH40006S | 7 | CNY | 0 | |||||
| * | CGH40045P | 0 | CNY | ||||||
| * | CGH40180PP | 0 | CNY | 0 | |||||
| * | CGH40120P | 0 | CNY | 0 | |||||
| * | CGH40120F | 0 | CNY | 0 | |||||
| * | CGH40090PP | 0 | CNY | 0 | |||||
| * | CGH40045F | 0 | CNY | 0 | |||||
| * | CGH40035F | 0 | CNY | 0 | |||||
| * | CGH40025P | 0 | CNY | 0 | |||||
| * | CGH40025F-TB | 0 | CNY | 0 | |||||
| * | CGH40025F | 0 | CNY | 0 | |||||
| * | CGH40010P | 0 | CNY | 0 | |||||
| * | CGH40010F | 0 | CNY | 0 | |||||
| * | CGH40006P | 0 | CNY | 0 | |||||
| * | CGH40010P | 101 | USD | 54.99 | |||||
| * | CGH40120F | 20200 | USD | 288.92 | |||||
| * | CGH40025F | 4500 | USD | 110.40 | |||||
| * | CGH40006S | 885 | USD | 28.18 | |||||
| * | CGH40035F | 223 | USD | 160.99 | |||||
| * | CGH40090PP | 0 | USD | 281.63 | |||||
| * | CGH40120P | 0 | USD | 288.92 | |||||
| * | CGH40006S-KIT | 1 | USD | 699.50 | Quote | ||||
| * | CGH40006S | 9031 | |||||||
| * | CGH40006P | 373 | |||||||
| * | CGH40010F | 1132 | |||||||
| * | CGH40045F | 339 |
Wolfspeed GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offer high efficiency; high gain and wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN has superior properties compared to Silicon or Gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
