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ON Semiconductor
BSR14 1807-BSR14
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
Time: 2023-12-23T11:03:02Z

(Standard Leadtime :) 7176

Quantity Price

1 10 100 1000 2500 Updated
* BSR14 0 CNY
* BSR14,215 0 CNY
* BSR14,215 0 CNY
* BSR14_D87Z 3520 USD
* BSR14,215 43410 USD
* BSR14 1374300 USD
* BSR14 0 USD
* BSR14,215 1 USD
* BSR14 1 USD
* BSR14,215 28224
* BSR14 0
* BSR14_D87Z 0
* BSR14 132000 CNY
* BSR14,215 0 CNY
* BSR14,215 0 CNY
* BSR14 522 USD
* BSR14 6005 USD 0.185693 0.175182 0.165266
* BSR14,215 1 USD
* BSR14_D87Z 5875 USD
* BSR14,215 1 USD
* BSR14-FAI 0
* BSR14.215 0

ON Semiconductor
NPN -55°C~150°C TJ 10nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 50mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 800mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 800mA volts.