• API
  • 中文
ICKU
∨
Ampleon USA Inc.
BLF178XRS,112 144-BLF178XRS,112
BLF178XRS,112 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon USA Inc. stock available at Utmel
Time: 2023-12-02T08:26:51Z

(Standard Leadtime :) 2

Quantity Price
1 1,568.902880
10 1,517.314197
25 1,506.766829
50 1,496.292779
100 1,465.516924
500 1,360.739949

1 10 100 1000 2500 Updated
* BLF175,112 2656 USD
* BLF177,112 6544 USD
* BLF177CR,112 4624 USD
* BLF178XRS,112 6832 USD
* BLF1721M8LS200U 7776 USD
* BLF174XR,112 6912 USD
* BLF174XRS,112 4576 USD
* BLF178P,112 6288 USD
* BLF178XR,112 6544 USD
* BLF177 1 USD
* BLF177,112 1 USD
* BLF177 86 USD 61.21 57.49
* BLF174XR,112 93
* BLF178P,112 50
* BLF178XR,112 40
* BLF1721M8LS200U 0
* BLF174XRS,112 0
* BLF178XRS,112 0
* BLF177CR,112 0
* BLF177CR,112 0
* BLF177,112 0
* BLF175,112 0
* BLF177 0
* BLF178P,112 785 USD 641.724800 605.400755 571.132787
* BLF174XRS,112 425 USD 826.871200 780.067170 735.912424
* BLF178XR,112 1244 USD 1326.436000 1282.820116
* BLF1721M8LS200U 6259 USD
* BLF174XR,112 6392 USD
* BLF177,112 17239 USD
* BLF178XRS,112 2 USD 1,614.381120 1,561.297021
* BLF178XR 1 USD
* BLF175,112 1 USD 101.237120 95.506717 90.100676
* BLF175 11583 USD
* BLF177CR,112 7478 USD
* BLF1721M8LS200 1 USD
* BLF177R 1 USD
* BLF175C 1229 USD 72.220000 68.132075 64.275543
* BLF174XR,112 53 USD 148.832340 140.407868 132.460252 117.889153
* BLF178P,112 1 USD 408.673814 385.541333 363.718239 323.707938
* BLF177,112 3983 USD
* BLF1721M8LS200 Please Inquiry USD
* BLF177CR,112 3640 USD
* BLF175,112 1 USD 97.142888 91.644234 86.456825 76.946266
* BLF177R Please Inquiry USD
* BLF175C 6670 USD
* BLF178XR 21 USD
* BLF178XR,112 53 USD 73.938320 69.753132 65.804842 58.566075
* BLF175 2815 USD
* BLF1721M8LS200U 13405 USD

Ampleon USA Inc.
BLF178XRS,112 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Ampleon USA Inc. stock available at Utmel
Ampleon Transistors - FETs, MOSFETs - RF BLF178XRS,112 are RF FETs (Field Effect Transistors) based on LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology. These transistors are designed for use in RF power amplifiers and are capable of operating at 110V. They have a maximum gain of 28dB and are packaged in a SOT539B package.